650V GaN
GaN innovation optimized to make the technology greener and more efficient at the same time
A Gallium nitride (GaN) power integrated circuit (IC) combines several power electronics functions into a single GaN chip, to improve speed, efficiency, reliability and cost-effectiveness.
The properties of GaN allow for high current, high voltage breakdown and high switching frequency.
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Applications
Our ambition: To develop the power supply market
by offering a revolutionary solution
AC-DC Converters
High Density Power Conversion
High Efficiency Power Conversion
VS Phase Shifted Full Bridge
Synchronous Buck or Boost
Bridgeless Totem Pole PFC
Features
- 650 V enhancement mode power switches
- Bottom-side cooling
configuration - Low inductance PQFN
package 350 mΩ to 80 mΩ Rds(on)
- 0 V to 6 V standard gate drive requirements
- -20 V / 10V transient tolerant gate drive
- > 1 MHz switching frequency
- Controllable fall time and rise time
- Integrated source sense
- Reverse current capability
- Zero reverse recovery
losse - 6 x8 mm PCB footprint
Key Benefits
Energy saving thanks to Wise Integration innovation
