WiseGan®

Customized for a Power Supply Miniaturization

650V GaN IC

GaN innovation optimized to make the technology greener and more efficient at the same time

A Gallium nitride (GaN) power integrated circuit (IC) combines several power electronics functions into a single GaN chip, to improve speed, efficiency, reliability and cost-effectiveness.
The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Half bridge

WI62120

Rds(on)120mΩ
Package (mm)6×8 PQFN

WI62175

Rds(on)175mΩ
Package (mm)6×8 PQFN

Discrete

WI63120

Integrated driver

Rds(on)120mΩ
Package (mm)8×8 PQFN

WI61120

Rds(on)120mΩ
Package (mm)8×8 PQFN

Applications

Our ambition: To develop the power supply
market by offering a revolutionary solution

AC-DC Converters

High Density Power Conversion

High Efficiency Power Conversion

VS Phase Shifted Full Bridge

Synchronous Buck or Boost

Bridgeless Totem Pole PFC

Features

  • 650V enhancement mode power switches
  • Bottom-side cooling configuration
  • Low inductance PQFN package
  • 350mΩ to 80mΩ Rds(on)

  • 0V to 6V standard gate drive requirements
  • -20V / 10V transient tolerant gate drive
  • > 1 MHz switching frequency
  • Controllable fall time and rise time
  • Integrated source sense
  • Reverse current capability
  • Zero reverse recovery losse
  • 6x8mm PCB footprint

Key Benefits

Energy saving thanks to Wise Integration innovation

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