WiseGan®

Customized for a power supply miniaturization

650V GaN

GaN innovation optimized to make the technology greener and more efficient at the same time

A Gallium nitride (GaN) power integrated circuit (IC) combines several power electronics functions into a single GaN chip, to improve speed, efficiency, reliability and cost-effectiveness.
The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Applications

Our ambition: To develop the power supply market
by offering a revolutionary solution

AC-DC Converters

High Density Power Conversion

High Efficiency Power Conversion

VS Phase Shifted Full Bridge

Synchronous Buck or Boost

Bridgeless Totem Pole PFC

Features

  • 650 V enhancement mode power switches
  • Bottom-side cooling
    configuration
  • Low inductance PDFN
    package
  • 0 V to 6 V standard gate drive requirements
  • -20 V / 10V transient tolerant gate drive
  • > 1 MHz switching frequency
  • Controllable fall time and rise time
  • Integrated source sense
  • Reverse current capability
  • Zero reverse recovery
    loss
  • 6×8 or 8x8mm PCB footprint

Key Benefits

Energy saving thanks to Wise Integration innovation

Half bridge

WI62120

Rds(on)120 mΩ
Package (mm)DFN 6×8

WI62195

Rds(on) 195 mΩ
Package (mm) DFN 6×8

Discrete

WI61195

Rds(on)195 mΩ
Package (mm)DFN 8×8

WI63120

Integrated driver

Rds(on) 120 mΩ
Package (mm) DFN 8×8
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